METHOD OF MONITORING AT LEAST ONE OF AN OVERLAY OR AN ALIGNMENT BETWEEN LAYERS OF A SEMICONDUCTOR SUBSTRATE, SCANNING PROBE MICROSCOPY SYSTEM AND COMPUTER PROGRAM

The present document relates to a method of monitoring an overlay or alignment between a first and second layer of a semiconductor using a scanning probe microscopy system. The method comprises scanning the substrate surface using a probe tip for obtaining a measurement of a topography of the first...

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Bibliographische Detailangaben
Hauptverfasser:	ZABBAL, Paul, CHUANG, Chung Bin, PIRAS, Daniele
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	The present document relates to a method of monitoring an overlay or alignment between a first and second layer of a semiconductor using a scanning probe microscopy system. The method comprises scanning the substrate surface using a probe tip for obtaining a measurement of a topography of the first and second layer in at least one scanning direction. At least one pattern template is generated which is matched with the topography of the first layer for determining a first candidate pattern. The first candidate pattern is matched with the measured second topography for obtaining a second candidate pattern to represent the measured topography of the second layer. Feature characteristics of device features are determined from both the first and second candidate pattern, and these are used to calculate one or more overlay parameters or alignment parameters.