SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF

Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kuang, Shin-Jiun, WU, Chung-Wei, Lin, Meng-Yu, Cheng, Chun-Fu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!