SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF

Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gat...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kuang, Shin-Jiun, WU, Chung-Wei, Lin, Meng-Yu, Cheng, Chun-Fu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.