INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY

Embodiments described herein provide for integrated input/output and logic devices for nanosheet technology and methods of fabrication for the devices. The types of transistors used for input/output devices and logic devices may differ such that, for example, input/output devices may use EG (Extended Gate) Field Effect Transistors (FET) while logic devices may use Suspended Gate (SG) FETs. Co-locating SG and EG devices on a single die provides for a fabricator to assure alignment between the nanosheets used in the SG and EG devices (improving consistency in the device characteristics on a single die) and reduce overall space requirements for the hardware used by input/output and logic devices.