VIA MANUFACTURING METHOD

VIA MANUFACTURING METHOD

A method is presented for manufacturing an insulated conductive via. The via crosses a first stack of layers to reach a first layer. A first cavity is formed partially extending into the first stack of layers. A second stack of layers is formed over the first stack of layers and in the first cavity....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GOURAUD, Pascal, BARLAS, Marios
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method is presented for manufacturing an insulated conductive via. The via crosses a first stack of layers to reach a first layer. A first cavity is formed partially extending into the first stack of layers. A second stack of layers is formed over the first stack of layers and in the first cavity. The second stack of layers includes an etch stop layer and an insulating layer. A second cavity is then formed extending completely through first and second stacks of layers to reach the first layer. An insulating liner then covers the walls and bottom of the second cavity. The insulating liner is then anisotropically etched, and the second cavity is filled by a conductive material forming the core of the via.