INTERPOSER STRUCTURE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

An interposer structure includes an interposer substrate, an interlayer insulating layer on an upper surface of the interposer substrate, a capacitor structure inside the interlayer insulating layer, a first via which penetrates the interlayer insulating layer in a vertical direction, the first via...

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Bibliographische Detailangaben
Hauptverfasser: AHN, Jeong Hoon, JANG, Woo Seong, HWANG, Je Gwan, KIM, Ji Hyung, HONG, Seok Jun, PARK, Won Ji, OH, Jae Hee, DING, Shaofeng
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An interposer structure includes an interposer substrate, an interlayer insulating layer on an upper surface of the interposer substrate, a capacitor structure inside the interlayer insulating layer, a first via which penetrates the interlayer insulating layer in a vertical direction, the first via being connected to the capacitor structure, an insulating layer on the interlayer insulating layer, a second via which penetrates the insulating layer in the vertical direction, the second via being connected to the first via, and a through via which completely penetrates each of the interposer substrate, the interlayer insulating layer, and the insulating layer in the vertical direction, an upper surface of the through via being coplanar with an upper surface of the second via.