PHOTODETECTOR, SOLID-STATE IMAGE SENSOR, AND METHOD OF MANUFACTURING PHOTODETECTOR

PHOTODETECTOR, SOLID-STATE IMAGE SENSOR, AND METHOD OF MANUFACTURING PHOTODETECTOR

A photodetector includes a semiconductor substrate; a photoelectric converter in the semiconductor substrate; and a condenser light-transmissive and opposed to the photoelectric converter. The condenser includes: an inorganic material layer at least partially overlapping the photoelectric converter...

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Bibliographische Detailangaben
Hauptverfasser: HIROSE, Yutaka, KABE, Tatsuya, TORAZAWA, Naoki
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A photodetector includes a semiconductor substrate; a photoelectric converter in the semiconductor substrate; and a condenser light-transmissive and opposed to the photoelectric converter. The condenser includes: an inorganic material layer at least partially overlapping the photoelectric converter in a plan view; and an inorganic material layer covering the inorganic material layer and having a refractive index lower than a refractive index of the inorganic material layer.