DEVICE AND METHOD FOR INHIBITING A SUBSTRATE CURRENT IN AN IC SEMICONDUCTOR SUBSTRATE

Devices and methods prevent injection of a substrate current into the substrate Sub of a CMOS circuit. The devices detect the potential of a contact of the integrated CMOS circuit, compare the value of the potential detected with a reference value and connect the contact to a leakage circuit node fo...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Friesen, Andreas, Abaza, Fikret, Liedtke, Marco, Friemann, Uwe, Sudhaus, Andre, Schmalhorst, Mats
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING VEHICLES IN GENERAL VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISEPROVIDED FOR
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Devices and methods prevent injection of a substrate current into the substrate Sub of a CMOS circuit. The devices detect the potential of a contact of the integrated CMOS circuit, compare the value of the potential detected with a reference value and connect the contact to a leakage circuit node for discharging the current such that same does not flow to ground via the parasitic bipolar lateral structure. The leakage circuit node can be connected to the reference potential line or to another line that has a higher potential than the reference potential line. This electrical connection is activated when the value of the potential of the contact is lower than or equal to a reference value.