MANAGING SEMICONDUCTOR LAYERS FOR A BIPOLAR-JUNCTION TRANSISTOR IN A PHOTONIC PLATFORM
An article of manufacture, having a semiconductor layer and a dielectric layer. The semiconductor layer comprising a first surface and a second surface. The dielectric layer located adjacent to the first surface of the semiconductor layer. One or more base portions of the semiconductor in direct con...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | An article of manufacture, having a semiconductor layer and a dielectric layer. The semiconductor layer comprising a first surface and a second surface. The dielectric layer located adjacent to the first surface of the semiconductor layer. One or more base portions of the semiconductor in direct contact with and extending from the dielectric layer. One or more collector portions of the semiconductor in direct contact with and extending from the dielectric layer. One or more emitter portions of the semiconductor in direct contact with and extending from the dielectric layer. The one or more collector portions are spaced apart from the one or more emitter portions by the one or more base portions. |
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