Monolithic Segmented LED Array Architecture With Islanded Epitaxial Growth

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second i...

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Bibliographische Detailangaben
Hauptverfasser:	Gordon, Luke, Papou, Andrei, Shen, Yu-Chen, Young, Erik William, Sharma, Rajat, Flemish, Joseph, Tandon, Ashish, Yu, Wen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HEATING LIGHTING MECHANICAL ENGINEERING NON-PORTABLE LIGHTING DEVICES SEMICONDUCTOR DEVICES SYSTEMS THEREOF VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLEEXTERIORS WEAPONS
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Beschreibung
Zusammenfassung:	A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.