STACKED FIELD-EFFECT TRANSISTORS WITH A SHIELDED OUTPUT

Structures including stacked field-effect transistors and methods of forming a structure including stacked field-effect transistors. The structure includes a field-effect transistor having a first active gate, a second active gate, and a drain region that is positioned in a horizontal direction betw...

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Bibliographische Detailangaben
Hauptverfasser: Khokale, Shweta Vasant, Shanbhag, Kaustubh, Ethirajan, Tamilmani
Format: Patent
Sprache:eng
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