SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JEONG, In-hye, PARK, Min-seop, KANG, Sung-gil, KIM, Gon-jun, SHIN, Jae-jin, BAEK, Jae-jik
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.