L-TYPE WORDLINE CONNECTION STRUCTURE FOR THREE-DIMENSIONAL MEMORY
A semiconductor manufacturing process for forming a three-dimensional (3D) memory structure and a semiconductor device having a 3D memory structure is described. The 3D memory structure comprises layers of memory cells with L shaped conductive layers where the L shaped conductive layers of each laye...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor manufacturing process for forming a three-dimensional (3D) memory structure and a semiconductor device having a 3D memory structure is described. The 3D memory structure comprises layers of memory cells with L shaped conductive layers where the L shaped conductive layers of each layer are coupled to metal lines disposed above the top or upper most layer such that the memory cells in each layer can be coupled to control circuitry. |
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