DRIVE DEVICE, DRIVE METHOD, AND POWER CONVERSION DEVICE

According to the present disclosure, the deterioration of SiC-MOSFETs is suppressed. A drive device switches between a first SiC-MOSFET and a second SiC-MOSFET that are connected in series, with a dead time where the first SiC-MOSFET and the second SiC-MOSFET are commanded to be OFF being provided i...

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Bibliographische Detailangaben
Hauptverfasser:	TAKUBO, Hiromu, KIGUCHI, Ryoga
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRICITY GENERATION PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:	According to the present disclosure, the deterioration of SiC-MOSFETs is suppressed. A drive device switches between a first SiC-MOSFET and a second SiC-MOSFET that are connected in series, with a dead time where the first SiC-MOSFET and the second SiC-MOSFET are commanded to be OFF being provided in between. This drive device includes: a first drive circuit configured to set the gate voltage of the first SiC-MOSFET, during the dead time, to a first middle voltage that is higher than a first negative power supply voltage and lower than a first threshold voltage for the first SiC-MOSFET; and a second drive circuit configured to set the gate voltage of the second SiC-MOSFET, during the dead time, to a second middle voltage that is higher than a second negative power supply voltage and lower than a second threshold voltage for the second SiC-MOSFET.