TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises mono-cry...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Jain, Vibhor, Chong, Kien Seen Daniel, Stein, Kenneth J, Tan, Shyue Seng, Chong, Yung Fu, Pekarik, John J, Liu, Qizhi, Holt, Judson R, Cai, Xinshu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises mono-crystal silicon based material; an intrinsic base under the emitter region and comprising semiconductor material; and an extrinsic base surrounding the emitter and over the intrinsic base.