TRANSISTOR DEVICE AND GATE STRUCTURE

TRANSISTOR DEVICE AND GATE STRUCTURE

A transistor device includes a substrate and a gate structure. The gate structure is disposed on the substrate. The gate structure includes a first metal layer and a refractory metal layer disposed on the first metal layer, wherein the first metal layer is disconnected and the refractory metal layer...

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Bibliographische Detailangaben
Hauptverfasser: SONG, Chun-Han, HUA, Chang-Hwang, WU, Pei-Ying, TSAI, Shu-Hsiao, SYU, Rong-Hao, YAN, Zong-Zheng
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A transistor device includes a substrate and a gate structure. The gate structure is disposed on the substrate. The gate structure includes a first metal layer and a refractory metal layer disposed on the first metal layer, wherein the first metal layer is disconnected and the refractory metal layer is disconnected.