SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A method of processing a substrate in which a silicon layer and a silicon germanium layer are alternately stacked one above another, includes: forming an oxide film by selectively oxidizing a surface layer of an exposed surface of the silicon germanium layer using a gas containing fluorine and oxyge...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of processing a substrate in which a silicon layer and a silicon germanium layer are alternately stacked one above another, includes: forming an oxide film by selectively oxidizing a surface layer of an exposed surface of the silicon germanium layer using a gas containing fluorine and oxygen radicalized with a remote plasma; and removing the oxide film. |
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