NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A nitride semiconductor light-emitting element includes: a substrate; a rectangular semiconductor stack structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer stacked in sequence above a main surface of the substrate; a p-side contact electrode in contact with the p-type semiconductor layer in a p-side contact region; and an n-side contact electrode in contact with the n-type semiconductor layer in an n-side contact region. In a plan view of the main surface, the semiconductor stack structure includes a first corner portion, the n-side contact region includes a linear first region extending in one direction from a first starting point spaced apart from the first corner portion, the p-side contact region is disposed between the first starting point and the first corner portion where the distance therebetween is less than or equal to 0.26 times the length of a shorter side of the semiconductor stack structure.