MONOLITHIC GROWTH OF EPITAXIAL SILICON DEVICES VIA CO-DOPING

MONOLITHIC GROWTH OF EPITAXIAL SILICON DEVICES VIA CO-DOPING

In one general embodiment, a structure includes a first diode, comprising: a first layer having a first type of dopant, and a second layer above the first layer, the second layer having a second type of dopant that is opposite to the first type of dopant. A second diode is formed directly on the fir...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chapin, Caitlin Anne, Voss, Lars F, Hernandez, Luis M, Rader, Mark
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In one general embodiment, a structure includes a first diode, comprising: a first layer having a first type of dopant, and a second layer above the first layer, the second layer having a second type of dopant that is opposite to the first type of dopant. A second diode is formed directly on the first diode. The second diode comprises a first layer having a third type of dopant and a second layer above the first layer of the second diode, the second layer of the second diode having a fourth type of dopant that is opposite to the third type of dopant. In another general embodiment, a process includes a repeated sequence of growing a first layer having a first type of electrically active dopant and growing a second layer having a second type of electrically active dopant that is opposite to the first type of dopant.