METHOD FOR MANUFACTURING WAFERS

METHOD FOR MANUFACTURING WAFERS

A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slici...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SOLTANI, Bahman, IKENO, Junichi, KAWAZU, Tomoki, NOMURA, Sodai, YAMADA, Yohei, YASUDA, Koichiro, TAKAGI, Ryota, SHIRAI, Hideaki, ISSHIKI, Yutaro, SOBAJIMA, Shunsuke
Format: Patent
Sprache:eng
Schlagworte:
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold. The energy density satisfies at least one of conditions of a peak value of the energy density is lower than or equal to 44 J/cm2, a rising rate of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm3, and a range of depth where the energy density exceeds the reforming threshold is smaller than or equal to 30 μm.