BOOST-ASSISTED MEMORY CELL SELECTION IN A MEMORY ARRAY

Systems, methods, and apparatus related to selecting memory cells in a memory array of a memory device. In one approach, bias circuitry generates a voltage on an access line used to select a memory cell for programming. During programming, a controller connects a boost capacitor to the access line by controlling a switch. Connecting the boost capacitor causes an increase in the rate of discharge of the access line (e.g., discharge of a word line to a negative voltage). After programming, the controller disconnects the boost capacitor from the access line, and the boost capacitor is pre-charged in preparation for a next programming operation (e.g., on the same or a different memory cell).