GaN POWER DEVICE

The present disclosure discloses a GaN power device having a structure improved to have an improved current density. The GaN power device includes a GaN layer, a first electrode and a second electrode formed on the GaN layer in a way to have a separation area therebetween, an AlGaN layer formed on the GaN layer of the separation area, a gate electrode formed over the AlGaN layer in a way to be separated from the first electrode and the second electrode, and a 2DEG layer formed at an interface of the AlGaN layer and the GaN layer in an area between the gate electrode and the second electrode.