METHOD AND APPARATUS FOR SETTING A SIDE WALL ANGLE OF A PATTERN ELEMENT OF A PHOTOLITHOGRAPHIC MASK

METHOD AND APPARATUS FOR SETTING A SIDE WALL ANGLE OF A PATTERN ELEMENT OF A PHOTOLITHOGRAPHIC MASK

The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of...

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Hauptverfasser: Rhinow, Daniel, Welte, Joachim, Bauer, Markus
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Sprache:eng
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APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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creator Rhinow, Daniel
Welte, Joachim
Bauer, Markus
description The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023109566A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023109566A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023109566A13</originalsourceid><addsrcrecordid>eNqNjL0KwjAURrs4iPoOF5yF_mDB8dLeNME0CcktjqWUOIkW6vtjhj6Aw8eBw-HbZ3NPLG0LaNKcQ488BBDWQyBmZTpACKoleKDWqeo0gRVJOmQmb4A09WR4k9Ky1So9dh6dVA30GO7HbPecXms8bTxkZ0HcyEtcPmNcl2mO7_gdh1DmZVXkt2tdY1H9V_0AjBc0kQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND APPARATUS FOR SETTING A SIDE WALL ANGLE OF A PATTERN ELEMENT OF A PHOTOLITHOGRAPHIC MASK</title><source>esp@cenet</source><creator>Rhinow, Daniel ; Welte, Joachim ; Bauer, Markus</creator><creatorcontrib>Rhinow, Daniel ; Welte, Joachim ; Bauer, Markus</creatorcontrib><description>The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230406&amp;DB=EPODOC&amp;CC=US&amp;NR=2023109566A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230406&amp;DB=EPODOC&amp;CC=US&amp;NR=2023109566A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Rhinow, Daniel</creatorcontrib><creatorcontrib>Welte, Joachim</creatorcontrib><creatorcontrib>Bauer, Markus</creatorcontrib><title>METHOD AND APPARATUS FOR SETTING A SIDE WALL ANGLE OF A PATTERN ELEMENT OF A PHOTOLITHOGRAPHIC MASK</title><description>The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL0KwjAURrs4iPoOF5yF_mDB8dLeNME0CcktjqWUOIkW6vtjhj6Aw8eBw-HbZ3NPLG0LaNKcQ488BBDWQyBmZTpACKoleKDWqeo0gRVJOmQmb4A09WR4k9Ky1So9dh6dVA30GO7HbPecXms8bTxkZ0HcyEtcPmNcl2mO7_gdh1DmZVXkt2tdY1H9V_0AjBc0kQ</recordid><startdate>20230406</startdate><enddate>20230406</enddate><creator>Rhinow, Daniel</creator><creator>Welte, Joachim</creator><creator>Bauer, Markus</creator><scope>EVB</scope></search><sort><creationdate>20230406</creationdate><title>METHOD AND APPARATUS FOR SETTING A SIDE WALL ANGLE OF A PATTERN ELEMENT OF A PHOTOLITHOGRAPHIC MASK</title><author>Rhinow, Daniel ; Welte, Joachim ; Bauer, Markus</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023109566A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>Rhinow, Daniel</creatorcontrib><creatorcontrib>Welte, Joachim</creatorcontrib><creatorcontrib>Bauer, Markus</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rhinow, Daniel</au><au>Welte, Joachim</au><au>Bauer, Markus</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR SETTING A SIDE WALL ANGLE OF A PATTERN ELEMENT OF A PHOTOLITHOGRAPHIC MASK</title><date>2023-04-06</date><risdate>2023</risdate><abstract>The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title METHOD AND APPARATUS FOR SETTING A SIDE WALL ANGLE OF A PATTERN ELEMENT OF A PHOTOLITHOGRAPHIC MASK
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T06%3A44%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Rhinow,%20Daniel&rft.date=2023-04-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023109566A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true