METHOD AND APPARATUS FOR SETTING A SIDE WALL ANGLE OF A PATTERN ELEMENT OF A PHOTOLITHOGRAPHIC MASK
The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element. |
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