METHOD OF INSPECTING A WAFER AND APPARATUS FOR PERFORMING THE SAME

METHOD OF INSPECTING A WAFER AND APPARATUS FOR PERFORMING THE SAME

A method of inspecting a wafer comprising measuring an intensity of an incident light and storing the measurement as stored incident light intensity, irradiating the incident light to the wafer, measuring an intensity of a reflected light from the wafer and storing the measurement as stored reflecte...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Hwang, Eunsoo, Hong, Kijoo, Park, Youngkyu, Oh, Juntaek, Ahn, Jinwoo
Format: Patent
Sprache:eng
Schlagworte:
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:A method of inspecting a wafer comprising measuring an intensity of an incident light and storing the measurement as stored incident light intensity, irradiating the incident light to the wafer, measuring an intensity of a reflected light from the wafer and storing the measurement as stored reflected light intensity, and correcting the stored reflected light intensity based on a difference between the stored incident light intensity and a reference intensity of a reference incident light.