SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of wirings which are layered over the first main surface in a thickness direction that is a direction extending from the second main surface to the first main surface, and a p...

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1. Verfasser:	FURUYA, Keiichi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	FURUYA, Keiichi
description	A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of wirings which are layered over the first main surface in a thickness direction that is a direction extending from the second main surface to the first main surface, and a passivation film which covers a top wiring that is a wiring being at a farthest position from the first main surface in the thickness direction, of the plurality of wirings. The top wiring has a first linear portion linearly extending along a first direction from a termination portion of the top wiring. The passivation film has a first dummy opening, the first dummy opening penetrating the passivation film in the thickness direction. The first dummy opening is disposed so as to overlap with an end portion of the first linear portion on the termination portion side, in plan view.
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The top wiring has a first linear portion linearly extending along a first direction from a termination portion of the top wiring. The passivation film has a first dummy opening, the first dummy opening penetrating the passivation film in the thickness direction. The first dummy opening is disposed so as to overlap with an end portion of the first linear portion on the termination portion side, in plan view.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230330&DB=EPODOC&CC=US&NR=2023099677A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230330&DB=EPODOC&CC=US&NR=2023099677A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FURUYA, Keiichi</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of wirings which are layered over the first main surface in a thickness direction that is a direction extending from the second main surface to the first main surface, and a passivation film which covers a top wiring that is a wiring being at a farthest position from the first main surface in the thickness direction, of the plurality of wirings. 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The first dummy opening is disposed so as to overlap with an end portion of the first linear portion on the termination portion side, in plan view.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsYGlpZm5uaOhsbEqQIA_3AfuA</recordid><startdate>20230330</startdate><enddate>20230330</enddate><creator>FURUYA, Keiichi</creator><scope>EVB</scope></search><sort><creationdate>20230330</creationdate><title>SEMICONDUCTOR DEVICE</title><author>FURUYA, Keiichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023099677A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FURUYA, Keiichi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FURUYA, Keiichi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2023-03-30</date><risdate>2023</risdate><abstract>A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of wirings which are layered over the first main surface in a thickness direction that is a direction extending from the second main surface to the first main surface, and a passivation film which covers a top wiring that is a wiring being at a farthest position from the first main surface in the thickness direction, of the plurality of wirings. The top wiring has a first linear portion linearly extending along a first direction from a termination portion of the top wiring. The passivation film has a first dummy opening, the first dummy opening penetrating the passivation film in the thickness direction. The first dummy opening is disposed so as to overlap with an end portion of the first linear portion on the termination portion side, in plan view.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICE
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