TRANSISTOR DEVICE AND METHOD FOR PRODUCING A TRANSISTOR DEVICE

According to an embodiment, a transistor device includes a semiconductor body. The semiconductor body has a first surface, a second surface opposing the first surface, side faces, an active area, an edge termination region that laterally surrounds the active area, a drain region of a first conductivity type at the second surface, a drift region of the first conductivity type on the drain region, and a body region of a second conductivity type that opposes the first conductivity type on the drift region. In the active area, a source region of the first conductivity type is arranged on the body region. The body region has a doping concentration that is higher in the active area than in the edge termination region.