ADDITIVE FOR PHOTORESIST, PHOTORESIST COMPOSITION FOR EUV INCLUDING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

An additive for a photoresist, a photoresist composition for a EUV including the same, and a method for manufacturing a semiconductor device using the same, the additive including a copolymer that includes a first repeating unit represented by the following Chemical Formula 1-1, and a second repeati...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, Ji Yup, SONG, Hyun Ji, HONG, Suk Koo, PARK, Ju Hyeon, KIM, Ye Chan, PARK, Ji Cheol, IM, Hong Gu, KIM, Hyun Woo, KIM, Jin Joo, KIM, Ju-Young
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	An additive for a photoresist, a photoresist composition for a EUV including the same, and a method for manufacturing a semiconductor device using the same, the additive including a copolymer that includes a first repeating unit represented by the following Chemical Formula 1-1, and a second repeating unit represented by the following Chemical Formula 2, wherein a molar ratio of the first repeating unit to the second repeating unit is 7:3 to 2:8,