SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for...

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Hauptverfasser: Chen, Kuang-Hsiu, Wang, Kai-Hsiang, Jiang, Bing-Yang, Wu, Guan-Ying, Huang, Jhong-Yi, Tang, Chi-Hsuan, Huang, Chung-Ting, Lin, Yu-Shu, Cheng, Yu-Lin, Chen, Chao-Nan, Chuang, Wei-Chih, Liu, Chia-Jong, Chen, Chun-Jen
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Chen, Kuang-Hsiu
Wang, Kai-Hsiang
Jiang, Bing-Yang
Wu, Guan-Ying
Huang, Jhong-Yi
Tang, Chi-Hsuan
Huang, Chung-Ting
Lin, Yu-Shu
Cheng, Yu-Lin
Chen, Chao-Nan
Chuang, Wei-Chih
Liu, Chia-Jong
Chen, Chun-Jen
description A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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