SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for...

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Bibliographische Detailangaben
Hauptverfasser:	Chen, Kuang-Hsiu, Wang, Kai-Hsiang, Jiang, Bing-Yang, Wu, Guan-Ying, Huang, Jhong-Yi, Tang, Chi-Hsuan, Huang, Chung-Ting, Lin, Yu-Shu, Cheng, Yu-Lin, Chen, Chao-Nan, Chuang, Wei-Chih, Liu, Chia-Jong, Chen, Chun-Jen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.