SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE REUSING METHOD

A semiconductor device manufacturing method includes forming a first film containing a first device on a first substrate, forming a second film containing a semiconductor layer on a second substrate, and changing the semiconductor layer into a porous layer. The method further includes forming a thir...

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Bibliographische Detailangaben
Hauptverfasser: OKADA, Shunsuke, ISOGAI, Tatsunori
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device manufacturing method includes forming a first film containing a first device on a first substrate, forming a second film containing a semiconductor layer on a second substrate, and changing the semiconductor layer into a porous layer. The method further includes forming a third film containing a second device on the second film, and bonding the first substrate and the second substrate to sandwich the first film, the third film, and the second film therebetween. The method further includes separating the first substrate and the second substrate from each other at a position of the second film.