SEMICONDUCTOR DEVICES WITH DISSIMLAR MATERIALS AND METHODS

SEMICONDUCTOR DEVICES WITH DISSIMLAR MATERIALS AND METHODS

A semiconductor device includes a work piece comprising a first material, a first side, a second side opposite to the first side, and a first coefficient of thermal expansion (first CTE). Recesses extend into the work piece from the first side and includes a pattern. A second material having a secon...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: GRIVNA, Gordon M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a work piece comprising a first material, a first side, a second side opposite to the first side, and a first coefficient of thermal expansion (first CTE). Recesses extend into the work piece from the first side and includes a pattern. A second material having a second CTE is within the recesses and is over the first material between the recesses; and A third material having a third CTE is over one of the second side or the second material. The third CTE and the second CTE are different than the first CTE.