DEVICE FOR CONTROLLING TRAPPED IONS WITH LOW HEAT DISSIPATION

A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode o...

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Bibliographische Detailangaben
Hauptverfasser:	Schoenherr, Helmut Heinrich, Purwin, Lina, Auchter, Silke Katharina, Dietl, Matthias German, Zesar, Alexander, Rössler, Clemens, Oles, Peter
Format:	Patent
Sprache:	eng
Schlagworte:	CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.