METHOD OF FORMING A PHOTORESIST ABSORBER LAYER AND STRUCTURE INCLUDING SAME

METHOD OF FORMING A PHOTORESIST ABSORBER LAYER AND STRUCTURE INCLUDING SAME

Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/...

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Bibliographische Detailangaben
Hauptverfasser: Innocent, Jerome, Saha, Arpita, Piumi, Daniele, Dezelah, Charles, Thukkaram, Monica, Zyulkov, Ivan, Huotari, Hannu, de Roest, David, Givens, Michael, Tomczak, Yoann
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.