SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a semiconductor memory device incudes: a stacked body in which a plurality of first conductive layers and a plurality of first insulating layers are alternately stacked one by one; and a contact that extends in the stacked body in the stacking direction, and is connected to a structure arranged on in the stacked body or below the stacked body. The contact includes: a second conductive layer that extends in the stacked body LM in the stacking direction, and serves as a core of the contact; and a second insulating layer that covers a sidewall of the second conductive layer, and serves as a liner of the contact. At least at a point close to the structure, when viewed in a cross section taken in a direction intersecting the stacking direction, a variation, in a circumferential direction of the contact, of a first distance from a center point of the second conductive layer to an outer edge of the second insulating layer is larger than a variation, in the circumferential direction of the contact, of a second distance from the center point to an outer edge of the second conductive layer.