SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

Provided are a semiconductor device and a semiconductor apparatus. The semiconductor device may include a first electrode; a second electrode spaced apart from the first electrode; and a selection device layer including a chalcogen compound layer between the first electrode and the second electrode...

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Bibliographische Detailangaben
Hauptverfasser: CHOI, Minwoo, SUNG, Hajun, YANG, Wooyoung, AHN, Dongho, KWON, Segab, LEE, Changseung
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Provided are a semiconductor device and a semiconductor apparatus. The semiconductor device may include a first electrode; a second electrode spaced apart from the first electrode; and a selection device layer including a chalcogen compound layer between the first electrode and the second electrode and a metal oxide doped in the chalcogen compound layer. In the semiconductor device, by doping the metal oxide, an off-current value (leakage current value) of the selection device layer may be reduced, and static switching characteristics may be implemented.