METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT

METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT

The forming of the tunnel junction layer includes forming a first n-type layer, forming a second n-type layer by introducing a first raw material gas into a furnace at a first temperature, the first raw material gas including a first gas having a first flow rate, and forming a third n-type layer by...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: KAWATA, Yoshitaka
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The forming of the tunnel junction layer includes forming a first n-type layer, forming a second n-type layer by introducing a first raw material gas into a furnace at a first temperature, the first raw material gas including a first gas having a first flow rate, and forming a third n-type layer by introducing a second raw material gas into a furnace at a second temperature, the second raw material gas including a second gas having a second flow rate, the second temperature being less than the first temperature. A first flow rate ratio of the first gas in the first raw material gas is greater than a second flow rate ratio of the second gas in the second raw material gas.