PHOTOVOLTAIC DEVICES AND SEMICONDUCTOR LAYERS WITH GROUP V DOPANTS AND METHODS FOR FORMING THE SAME

According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central regi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Xiong, Gang, Peng, Hongying, Lu, Dingyuan, Cao, Hongbo, Grover, Sachit, Xin, Qianqian, Shiang, Joseph John, Huber, William Hullinger, Li, Xiaoping, Malik, Roger
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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