PHOTOVOLTAIC DEVICES AND SEMICONDUCTOR LAYERS WITH GROUP V DOPANTS AND METHODS FOR FORMING THE SAME

PHOTOVOLTAIC DEVICES AND SEMICONDUCTOR LAYERS WITH GROUP V DOPANTS AND METHODS FOR FORMING THE SAME

According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central regi...

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Bibliographische Detailangaben
Hauptverfasser: Xiong, Gang, Peng, Hongying, Lu, Dingyuan, Cao, Hongbo, Grover, Sachit, Xin, Qianqian, Shiang, Joseph John, Huber, William Hullinger, Li, Xiaoping, Malik, Roger
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.