SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

A technique capable of improving uniformity of characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect a substrate processing apparatus is provided including: a process chamber for processing a substrate; a substrate support in the process cha...

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Bibliographische Detailangaben
Hauptverfasser:	TAKASAKI, Tadashi, OHASHI, Naofumi, YANAI, Hidehiro
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A technique capable of improving uniformity of characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect a substrate processing apparatus is provided including: a process chamber for processing a substrate; a substrate support in the process chamber and including a plurality of placement parts for placing the substrate; a rotating part to rotate the substrate support; a heater provided below or within the substrate support; a first nozzle above the placement parts so as to face the placement parts and including a first portion with no hole to thermally decompose a process gas; and a second nozzle above the placement parts and parallel with the first nozzle and including a second portion with no hole to thermally decompose the process gas; and controller for controlling a positional relationship between the substrate and first nozzle via the rotating part.