SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor substrate has a surface and a convex portion projecting upward from the surface. An n-type drift region has a portion located in the convex portion. The n−-type drain region has a higher n-type impurity concentration than the n-type drift region, and is arranged in the convex portion...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NAKASHIBA, Yasutaka, KAWAI, Tohru, KOSHIMIZU, Makoto
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor substrate has a surface and a convex portion projecting upward from the surface. An n-type drift region has a portion located in the convex portion. The n−-type drain region has a higher n-type impurity concentration than the n-type drift region, and is arranged in the convex portion and on the n-type drift region such that the n−-type drain region and a gate electrode sandwich the n-type drift region in plan view.