SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A metal-insulator-metal (MIM) device may include a first metal layer. The MIM device may include an insulator stack on the first metal layer. The insulator stack may include a first high dielectric constant (high-K) layer on the first metal layer. The insulator stack may include a low dielectric con...

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Bibliographische Detailangaben
Hauptverfasser: CHEN, Yen-Hsiu, CHEN, Yung-Hsiang, CHUANG, Chihchous, CHEN, Wei-Liang, YEH, Yu-Lung, HUANG, Ching-Hung
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Zusammenfassung:A metal-insulator-metal (MIM) device may include a first metal layer. The MIM device may include an insulator stack on the first metal layer. The insulator stack may include a first high dielectric constant (high-K) layer on the first metal layer. The insulator stack may include a low dielectric constant (low-K) layer on the first high-K layer. The insulator stack may include a second high-K layer on the low-K layer. The MIM device may include a second metal layer on the insulator stack.