SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device and a method of manufacturing the semiconductor device to achieve both of a high breakdown voltage and a low on resistance are provided. A semiconductor substrate includes a convex portion protruding upward from a surface of the semiconductor substrate. An n-type drift region is arranged on the semiconductor substrate so as to be positioned between a gate electrode and an n+-type drain region in plan view, and has an impurity concentration lower than an impurity concentration of the n+-type drain region. A p-type resurf region is arranged in the convex portion and forms a pn junction with the n-type drift region.