SEMICONDUCTOR DEVICE AND MEMORY DEVICE COMPRISING THE SAME
A semiconductor device including an error amplifier configured to receive a voltage of an output node and a reference voltage, a flipped voltage follower (FVF) circuit configured to receive an output of the error amplifier and maintain the voltage of the output node at the reference voltage, and a b...
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| creator | KWAK, Myoung Bo PARK, Jae Woo CHOI, Jun Han ROH, Kyoung Jun CHOI, Jung Hwan |
| description | A semiconductor device including an error amplifier configured to receive a voltage of an output node and a reference voltage, a flipped voltage follower (FVF) circuit configured to receive an output of the error amplifier and maintain the voltage of the output node at the reference voltage, and a bias current control circuit configured to receive first to third mode signals, control a magnitude of a bias current flowing through the FVF circuit based on the first to third mode signals, control the bias current of a first magnitude, based on the first mode signal, control the bias current of a second magnitude smaller than the first magnitude, based on the second mode signal, and control the bias current of a third magnitude smaller than the second magnitude, based on the third mode signal. |
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| subjects | AMPLIFIERS BASIC ELECTRONIC CIRCUITRY CONTROLLING ELECTRICITY INFORMATION STORAGE PHYSICS REGULATING STATIC STORES SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES |
| title | SEMICONDUCTOR DEVICE AND MEMORY DEVICE COMPRISING THE SAME |
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