SEMICONDUCTOR DEVICE AND MEMORY DEVICE COMPRISING THE SAME

A semiconductor device including an error amplifier configured to receive a voltage of an output node and a reference voltage, a flipped voltage follower (FVF) circuit configured to receive an output of the error amplifier and maintain the voltage of the output node at the reference voltage, and a bias current control circuit configured to receive first to third mode signals, control a magnitude of a bias current flowing through the FVF circuit based on the first to third mode signals, control the bias current of a first magnitude, based on the first mode signal, control the bias current of a second magnitude smaller than the first magnitude, based on the second mode signal, and control the bias current of a third magnitude smaller than the second magnitude, based on the third mode signal.