ENHANCED PATTERNING PROCESS FOR QUBIT FABRICATION

The method that includes cleaning the surface of a silicon wafer, forming a sacrificial layer on top of the silicon wafer; forming at least one window in the sacrificial layer exposing the surface of the silicon wafer, and processing the silicon wafer, wherein the processing includes forming at leas...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Gibson, Gerald W
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The method that includes cleaning the surface of a silicon wafer, forming a sacrificial layer on top of the silicon wafer; forming at least one window in the sacrificial layer exposing the surface of the silicon wafer, and processing the silicon wafer, wherein the processing includes forming at least one layer in the at least window, such that, wherein the at least one layer includes a first section that is direct contact with the silicon wafer and the walls of the at least one window created by the sacrificial layer, a main section that extends from the first section, and a bump out section that extends from the sides of the main section and the bottom surface of the bump out section is in contact with the sacrificial layer. Prior to the insertion into a dilute refrigeration unit removing the sacrificial layer by exposing it to a solvent, wherein the removal of the sacrificial layer causes the bottom surface of the bump section, the side portion of the first section, and the top surface of the silicon form a space without material.