NON-VOLATILE MEMORY DEVICE WITH FILAMENT CONFINEMENT

NON-VOLATILE MEMORY DEVICE WITH FILAMENT CONFINEMENT

A memory device and method of making the same is provided. The memory device includes a first electrode, an oxygen scavenging layer on the first electrode, a hard mask on the oxygen scavenging layer, and a second electrode on the hard mask. A switching layer is arranged on a portion of the oxygen sc...

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Bibliographische Detailangaben
Hauptverfasser: Tan, Shyue Seng, TOH, ENG HUAT, LOY, DESMOND JIA JUN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A memory device and method of making the same is provided. The memory device includes a first electrode, an oxygen scavenging layer on the first electrode, a hard mask on the oxygen scavenging layer, and a second electrode on the hard mask. A switching layer is arranged on a portion of the oxygen scavenging layer, and the switching layer is conformal to a side surface of the hard mask.