PLASMA-RESISTANT GLASS AND MANUFACTURING METHOD THEREOF

The present invention relates to plasma-resistant glass containing 32-52 mol % of SiO2, 5-15 mol % of Al2O3, 30-35 mol % of CaO, and 0.1-15 mol % of CaF2 as chemical components, and a manufacturing method thereof. According to the present invention, a glass stability index KH is 2.0 or higher, and a...

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Bibliographische Detailangaben
Hauptverfasser: LEE, Mun Ki, KIM, Dae Gean, SEOK, Hye Won, KIM, Hyeong Jun
Format: Patent
Sprache:eng
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Zusammenfassung:The present invention relates to plasma-resistant glass containing 32-52 mol % of SiO2, 5-15 mol % of Al2O3, 30-35 mol % of CaO, and 0.1-15 mol % of CaF2 as chemical components, and a manufacturing method thereof. According to the present invention, a glass stability index KH is 2.0 or higher, and a plasma-resistant characteristic of an etch rate of lower than 10 nm/min for a mixed plasma of fluorine and argon (Ar) is exhibited.