PASSIVATION LAYER FOR PROTECTING SEMICONDUCTOR STRUCTURES

PASSIVATION LAYER FOR PROTECTING SEMICONDUCTOR STRUCTURES

A method for making a semiconductor structure includes forming a first fin and a second fin over a substrate. The method includes forming one or more work function layers over the first and second fins. The method includes forming a nitride-based metal film over the one or more work function layers....

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Hauptverfasser: Chuang, Ying-Liang, Hsu, Yao-Wen
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Chuang, Ying-Liang
Hsu, Yao-Wen
description A method for making a semiconductor structure includes forming a first fin and a second fin over a substrate. The method includes forming one or more work function layers over the first and second fins. The method includes forming a nitride-based metal film over the one or more work function layers. The method includes covering the first fin with a patternable layer. The method includes removing a second portion of the nitride-based metal film from the second fin, while leaving a first portion of the nitride-based metal film over the first fin substantially intact.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023039596A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023039596A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023039596A13</originalsourceid><addsrcrecordid>eNrjZLAMcAwO9gxzDPH091PwcYx0DVJw8w9SCAjyD3F1DvH0c1cIdvX1dPb3cwl1DgFKBIcEARmhQa7BPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyMDI2MDY0tTSzNHQmDhVAIUIKnk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PASSIVATION LAYER FOR PROTECTING SEMICONDUCTOR STRUCTURES</title><source>esp@cenet</source><creator>Chuang, Ying-Liang ; Hsu, Yao-Wen</creator><creatorcontrib>Chuang, Ying-Liang ; Hsu, Yao-Wen</creatorcontrib><description>A method for making a semiconductor structure includes forming a first fin and a second fin over a substrate. The method includes forming one or more work function layers over the first and second fins. The method includes forming a nitride-based metal film over the one or more work function layers. The method includes covering the first fin with a patternable layer. The method includes removing a second portion of the nitride-based metal film from the second fin, while leaving a first portion of the nitride-based metal film over the first fin substantially intact.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230209&amp;DB=EPODOC&amp;CC=US&amp;NR=2023039596A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230209&amp;DB=EPODOC&amp;CC=US&amp;NR=2023039596A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chuang, Ying-Liang</creatorcontrib><creatorcontrib>Hsu, Yao-Wen</creatorcontrib><title>PASSIVATION LAYER FOR PROTECTING SEMICONDUCTOR STRUCTURES</title><description>A method for making a semiconductor structure includes forming a first fin and a second fin over a substrate. The method includes forming one or more work function layers over the first and second fins. The method includes forming a nitride-based metal film over the one or more work function layers. The method includes covering the first fin with a patternable layer. The method includes removing a second portion of the nitride-based metal film from the second fin, while leaving a first portion of the nitride-based metal film over the first fin substantially intact.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMcAwO9gxzDPH091PwcYx0DVJw8w9SCAjyD3F1DvH0c1cIdvX1dPb3cwl1DgFKBIcEARmhQa7BPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyMDI2MDY0tTSzNHQmDhVAIUIKnk</recordid><startdate>20230209</startdate><enddate>20230209</enddate><creator>Chuang, Ying-Liang</creator><creator>Hsu, Yao-Wen</creator><scope>EVB</scope></search><sort><creationdate>20230209</creationdate><title>PASSIVATION LAYER FOR PROTECTING SEMICONDUCTOR STRUCTURES</title><author>Chuang, Ying-Liang ; Hsu, Yao-Wen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023039596A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chuang, Ying-Liang</creatorcontrib><creatorcontrib>Hsu, Yao-Wen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chuang, Ying-Liang</au><au>Hsu, Yao-Wen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PASSIVATION LAYER FOR PROTECTING SEMICONDUCTOR STRUCTURES</title><date>2023-02-09</date><risdate>2023</risdate><abstract>A method for making a semiconductor structure includes forming a first fin and a second fin over a substrate. The method includes forming one or more work function layers over the first and second fins. The method includes forming a nitride-based metal film over the one or more work function layers. The method includes covering the first fin with a patternable layer. The method includes removing a second portion of the nitride-based metal film from the second fin, while leaving a first portion of the nitride-based metal film over the first fin substantially intact.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PASSIVATION LAYER FOR PROTECTING SEMICONDUCTOR STRUCTURES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T16%3A37%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Chuang,%20Ying-Liang&rft.date=2023-02-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023039596A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true