SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor laser device includes an N-type cladding layer, an active layer, and a P-type cladding layer. The active layer includes a well layer, a P-side first barrier layer above the well layer, and a P-side second barrier layer above the P-side first barrier layer. The P-side second barrier l...

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Bibliographische Detailangaben
Hauptverfasser:	YUMOTO, Takashi, TAKASUKA, Shoichi, NAGAI, Hiroki, YOKOYAMA, Takeshi, TAKAYAMA, Toru, NAKATANI, Togo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor laser device includes an N-type cladding layer, an active layer, and a P-type cladding layer. The active layer includes a well layer, a P-side first barrier layer above the well layer, and a P-side second barrier layer above the P-side first barrier layer. The P-side second barrier layer has an AI composition ratio higher than an AI composition ratio of the P-side first barrier layer. The P-side second barrier layer has band gap energy greater than band gap energy of the P-side first barrier layer. The semiconductor laser device has an end face window structure in which band gap energy of a portion of the well layer in a vicinity of an end face that emits the laser light is greater than band gap energy of a central portion of the well layer in a resonator length direction.